Qualifications
• In-Depth understanding on optoelectronic device physics and materials sciences.
• Proficient in optoelectronic device design, process and characterization.
• Hands-on experience on clean room facilities including RIE / ICP dry etch, wet etch, Photolithography, PECVD, E-beam metal evaporation, thermal metal evaporation, RTA, SEM, profilometer, film thickness measurement and other metrologies..
• Expert at modeling and simulation tools such as AutoCAD, L-edit, Rsoft and Matlab.
• Familiar with SPC and analysis software such as Minitab.
• Excellent oral and written communication skills, strong interpersonal communication skills.
Experience
Photonic Corporation Los Angeles, CA
Senior Process Engineer (June 2010-May 2012)
• Led a team to Fabricate and characterize diluted waveguide coupled UTC photodetector on InP/InGaAs platform.
− Owned process runcard, sustained, developed and optimized process to achieve 20mW, 25GHz photodetectors for data communications with low dark current ( 1nA at -5V) and high resposivity (0.95 A/W)
− Tested photodetectors on DC and RF platform including: dark current, responsivity, bandwidths and linearity.
• Managed backside process for Si/Ge tunable laser
− Backside pattern transferred and released front side tunable laser by backside aligning and etching 700um Si
Univ. of Texas at Arlington Arlington, TX
Postdoctoral fellow (May 2010-June 2010)
• Managed a research group to develop Si infrared photo-detectors based on 260nm ultra compact photonic crystal slab. The photonic crystal resonance coupled with infrared absorptive medium generating very high selectivity absorption at target wavelength region. The observed absorption was increased 15 times compared with structure without photonic crystal resonance.
Hefei Yuhui Semiconductor Corp Hefei, China
Senior Development Engineer (July 1996-Dec 2001)
• Developed a high performance photodetector based on c-Si platform.
− Led a R&D team to develop an economic type of c-Si photodetector. The photo responsivity was increased 20% and the dark current was reduced by 50%.
Education
Univ. of Texas at Arlington (GPA: 4.0/4.0) Arlington, TX
PhD in Electrical Engineering (June 2005-May 2010)
• High spectral selectivity photonic crystal based infrared photo-detectors
− Designed and fabricated GaAs/InGaAs/AlGaAs infrared photo-detectors with 2D photonic crystal cavities. The dark current was reduce...
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